Localization of defects of a metallic layer of a semiconductor c

Details Localization of defects of a metallic layer of a semiconductor c Localization of defects of a metallic layer of a semiconductor c

1996-12-20

1999-11-02

Dutton, Brian

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

438 17, G01R 3126, H01L 2100, H01L 2166

Patent

active

059768983

ABSTRACT:
A method for locating possible defects on an opaque layer deposited on a production wafer of a semiconductor circuit, consisting in locally radiating an upper surface of the wafer by means of a laser, and detecting the occurrence of a current in a diode constituted by a PN junction placed under the opaque layer to be examined.

REFERENCES:
patent: 4968932 (1990-11-01), Baba et al.
patent: 5329139 (1994-07-01), Sanada
patent: 5365034 (1994-11-01), Kawamura et al.
patent: 5430305 (1995-07-01), Cole, Jr. et al.

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