Local oxidation of silicon substrate using LPCVD silicon nitride

Details Local oxidation of silicon substrate using LPCVD silicon nitride Local oxidation of silicon substrate using LPCVD silicon nitride

1983-10-24

1984-09-18

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

25576W, 1566591, 156662, 156653, 156657, 427 94, H01L 21318, H01L 2176

Patent

active

044724594

ABSTRACT:
The formation of silicon dioxide isolated silicon islands on the surface of a substrate is improved by utilizing as an oxidation mask a patterned layer of silicon nitride which is deposited by LPCVD directly onto the surface of the silicon wafer. The subject method substantially reduces the incidence of stress related defects in the silicon surface and therefore eliminates the need for a layer of pad oxide which, if present, would cause "bird's beak" formation.

REFERENCES:
patent: 4279947 (1981-07-01), Goldman
patent: 4333964 (1982-06-01), Ghezzo
patent: 4363868 (1982-12-01), Takasaki
Appels et al., "Local Oxidation of Silicon and . . . ," Philips Res. Repts., vol. 25, 118-132, 4-1970.
Appels et al., Philips Research Reports, vol. 26, No. 3, pp. 157-165, 1971.

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