Local oxidation of silicon planarization for polysilicon...

Details Local oxidation of silicon planarization for polysilicon... Local oxidation of silicon planarization for polysilicon...

2011-07-19

2011-07-19

Landau, Matthew C. (Department: 2813)

Semiconductor device manufacturing: process

Making passive device

Resistor

C257SE21004, C257SE21553

Reexamination Certificate

active

07981759

ABSTRACT:
In accordance with the teachings described herein, a method for fabricating a patterned polysilicon layer having a planar surface may include the steps of: depositing a polysilicon film above a substrate material; depositing an oxide-resistant mask over the polysilicon film; patterning and etching the oxide-resistant mask to form a patterned mask layer over the polysilicon film, such that the polysilicon film includes masked and unmasked portions; etching the unmasked portions of the polysilicon film for a first amount of time; oxidizing the etched polysilicon film for a second amount of time to form an oxide layer that defines the patterned polysilicon layer; and removing the patterned mask layer; wherein the first and second amounts of time are selected such that the oxide layer and the patterned polysilicon layer have about the same thickness and form a planar surface.

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