Local oxidation method with bird's beak suppression

Fishing – trapping – and vermin destroying

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H01L 2176

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active

055040349

ABSTRACT:
A method for eliminating the bird's beak from selective oxidations of semiconductor electronic devices having a semiconductor substrate (1) which is covered by a pad oxide layer (2) covered, in turn, by a first layer (3) of nitride, and wherein at least one vertical-walled pit (11) is defined for growing an isolation region, comprises the sequential steps of: selectively etching the oxide layer (2) within the pit (11) to define peripheral recesses (6,8) between the substrate (1) and the nitride; filling the recesses (6,8) with nitride; and growing oxide in the pit (11) so as to form the isolation region contrasting the nitride portions (9,10) which occlude the recesses (6,8).

REFERENCES:
patent: 4563227 (1986-01-01), Sakai et al.
patent: 5254494 (1993-10-01), Van der Plas et al.
IBM Technical Disclosures Bulletin, vol. 24, No. 9 Feb. '82 New York, USA pp. 4744-4745.
Chiu et al., "The SWAMI--A Defect Free and Near-Zero Bird's-Beak Local Oxidation Process and Its Application in VLSI Technology," 1982 IEDM 224ff.
"A new fully recessed-oxide field isolation technology for scaled VLSI Circuit fabrication," IEEE Electron Device Letters, vol. EDL-7, No. 2, Feb. 1986, pp. 124-126.

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