Local interconnect

Details Local interconnect Local interconnect

2005-08-09

2005-08-09

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S762000, C438S622000

Reexamination Certificate

active

06927494

ABSTRACT:
A method for forming the electrical interconnect levels and circuit elements of an integrated circuit is provided by the present invention. The method utilizes a relatively thin layer of conductive material having a higher resistance than the metal typically used to form electrical interconnections, such as titanium nitride, to provide relatively short local interconnections between circuit elements of the integrated circuit. In addition, this same thin layer of conductive material is used to form macro elements such as capacitors, resistors, and fuses in the integrated circuit. By allowing the removal of space consuming transverse electrical interconnect lines from the interconnect levels, the present invention increases the routing density of the electrical interconnect levels. Furthermore, by allowing these local electrical interconnections to be produced during the same manufacturing step as the macro elements of the integrated circuit, the method of the present invention tends to reduce the number of steps required to produce an integrated circuit.

REFERENCES:
patent: 5366911 (1994-11-01), Lur et al.
patent: 6087677 (2000-07-01), Wu
patent: 6444565 (2002-09-01), Feild et al.

Affiliated with

Also associated with

Rating

Local interconnect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Local interconnect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Local interconnect will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3520870