Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1994-08-03
1996-01-16
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257728, H01L 3902, H01L 2312, H01L 2314
Patent
active
054850363
ABSTRACT:
A local R.F. ground plane for high frequency active device. The R.F. grounded terminal of each active device is connected directly to its local R.F. ground plane. In the case of a transistor, there are common emitter, common base, or common collector circuits. The common electrode or terminal is connected directly to the local R.F. ground plane. In the case of a FET, the common electrode can be the source, gate or drain. In the case of a thermionic vacuum tube, the common electrode can be the cathode, grid or plate. In the case of a vacuum microelectronic device, the names are still evolving. The local R.F. ground is bypassed to the case of the package near the local R.F. input and/or output connections. This design permits double bond wires from the emitter to the local R.F. ground plane and eliminates parasitic oscillations where the potential oscillation frequency of the active device being protected is at least twice as great as the operating frequency of the package.
REFERENCES:
patent: 3784883 (1974-01-01), Duncan et al.
patent: 5138436 (1992-08-01), Koepf
Clark S. V.
Crane Sara W.
Hazeltine Corporation
Onders E. A.
Ritchie W. B.
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