Local flare correction

Details Local flare correction Local flare correction

2005-06-08

2009-10-20

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S005000, C430S311000, C716S030000, C355S052000, C382S144000

Reexamination Certificate

active

07604912

ABSTRACT:
A correction of a local flare generated at a time of exposure when manufacturing a semiconductor device, wherein a substantial numerical aperture to a pattern in a region to be exposed is calculated for the each region, after that, the flare correction amount for the pattern in the each region is adjusted in conformity with the substantial numerical aperture and exposure conditions in the each region. Backed by this, the effect of the local flare on the pattern exposed by photolithography can be quantitatively corrected in conformity with the respective exposure conditions, so that a desired pattern can be formed readily and accurately.

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Patent Abstracts of Japan, publication No. 2001272766 A, published on Oct. 5, 2001.
Chinese Office Action mailed Jan. 9, 2009.

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