Local ESD protection for low-capicitance applications

Details Local ESD protection for low-capicitance applications Local ESD protection for low-capicitance applications

2007-04-25

2010-02-23

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S355000, C257S360000, C257SE29219

Reexamination Certificate

active

07667243

ABSTRACT:
A semiconductor device for locally protecting an integrated circuit input/output (I/O) pad (301) against ESD events, when the I/O pad is located between a power pad (303) and a ground potential pad (305a). A first diode (311) and a second diode (312) are connected in series, the anode (311b) of the series connected to the I/O pad and the cathode (312a) connected to the power pad. A third diode (304) has its anode (304b) tied to the ground pad and its cathode (304a) tied to the I/O pad. A string (320) of at least one diode has its anode (321b) connected to the series between the first and second diode (node313), isolated from the I/O pad, and its cathode (323a) connected to the ground pad. The string (320) may comprise three or more diodes.

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