Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-06-26
2007-06-26
Nguyen, Thanh (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S774000
Reexamination Certificate
active
10405856
ABSTRACT:
The present invention is a novel method whereby voids or solid opens at the bottom of via can be avoided without drastically altering the resistivity or parasitic capacitances of the whole metal interconnect system. The invention includes in one embodiment a process of forming interconnects and vias in a microelectronic circuit structure. This process includes implanting and/or alloying an impurity element in the local area of the top surface of a metal interconnect at the bottom of a via. Doping may be done before or after formation of the via. After the via is formed, it is filled with a metal such as copper. Another embodiment of the invention is a microelectronic circuit structure manufactured by the aforementioned method.
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Gregoire Francois
Jayapalan Jayakannan
Liu Yow-Juang(Bill) W.
McElheny Peter John
Altera Corporation
Morgan & Lewis & Bockius, LLP
Nguyen Thanh
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