Load resistance structure for source follower in charge transfer

Details Load resistance structure for source follower in charge transfer Load resistance structure for source follower in charge transfer

1994-09-08

1995-10-24

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257237, 257247, H01L 2978

Patent

active

054612470

ABSTRACT:
Disclosed is a charge transfer device which has charge transfer registers, a floating diffusion layer for receiving a signal charge transferred from the charge transfer registers, a reset circuit for extracting a signal charge transferred from the floating diffusion layer and resetting a potential of the floating diffusion layer periodically to a predetermined potential, and an output circuit of a source follower formed by a MOSFET having a gate connected to the floating diffusion layer and a load resistance connected to a source of the MOSFET. The load resistance includes a substrate of a first conductivity type, a diffusion layer of a second conductivity type which is provided on the substrate, and a carrier accumulation layer of the first conductivity type which is provided at the top surface of the diffusion layer. The S/N ratio of the output circuit is improved since the channel of the load resistance of the source follower connected to the floating diffusion layer is completely separated from the interface level that exists at the silicon/oxide layer interface.

REFERENCES:
patent: 4668971 (1987-05-01), Hynecek
patent: 4984045 (1991-01-01), Matsunaga
patent: 5306932 (1994-04-01), Miwada
patent: 5357128 (1994-10-01), Shinji
"Two-Phase Charge-Coupled Devices with Overlapping Polysilicon and Aluminum Gates", by W. F. Kosonocky et al. RCA Review, vol. 34, Mar. 1973, pp. 164-202.

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