Load gate compensator circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307205, 307214, 307304, H03K 102, H03K 110, H03K 1908, H03K 1940

Patent

active

040164349

ABSTRACT:
An FET load gate compensator circuit is disclosed which compensates for variations in the parameters characterizing the silicon substrate in FET large scale integrated circuit device, by generating a compensatory load gate voltage to be applied to the load gates of the functional circuits therein.

REFERENCES:
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patent: 3702943 (1972-11-01), Heyner et al.
patent: 3789246 (1974-01-01), Preisig et al.
patent: 3823332 (1974-07-01), Feryszka et al.
patent: 3875430 (1975-04-01), Prak
patent: 3913026 (1975-10-01), Koehler
patent: 3970875 (1976-07-01), Leehan
Pleshko et al, "MOS Transistor Electronic Stabilization of Thresholds"; IBM Tech. Discl. Bull.; vol. 10, No. 3, p. 336, 8/1967.
Frantz; "Threshold Voltage Control for N-Channel MOSFET Devices"; IBM Tech. Discl. Bull.; vol. 12, No. 12, p. 2078; 5/1970.
Baitinger et al.; "Constant-Current Source Network"; IBM Tech. Discl. Bull.; vol. 13, No. 9, p. 2516, 2/1971.

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