Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Patent
1994-12-06
1997-01-14
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
257565, 257566, 257579, H01L 2972, H01L 27102
Patent
active
055942717
ABSTRACT:
A bipolar transistor of the multi-emitter type which is provided with a large number of emitter diffusion layers formed in the two-dimensionally arranged state on a base diffusion layer of a substrate, a large number of emitter electrode films formed respectively correspondingly on the emitter diffusion layers, a base electrode film formed on the base diffusion layer, and a collector electrode film formed on the substrate, and the transistor is further provided with a wiring film commonly connected to the large number of emitter electrode films except at least one of the emitter electrode films.
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Imaeda Yasuo
Iwata Hitoshi
Jinkai Koichi
Brown Peter Toby
Kabushiki Kaisha Tokai Rika Denki Seisakusho
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