Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Patent
1997-12-30
2000-08-22
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
257108, 361 27, H01L 2362
Patent
active
061076694
ABSTRACT:
An intelligence power device (IPD), having a temperature-sensitive and heat-damage protecting function, is used as a semiconductor relay which controls load current supplied to an electric load. A target sensitive temperature T.sub.SD of IPD is determined according to an allowable load current value, using an equation T.sub.SD =I.sup.2 .times.R.sub.ON .times.R.sub.TEMP +T.sub.ROOM, where I represents an allowable load current value, R.sub.ON represents an on-resistance value of a power MOSFET, R.sub.TEMP represents a thermal resistance value of an entire radiation system of IPD, and T.sub.ROOM represents an ambient temperature of IPD. When the load current exceeds the allowable load current value, IPD stops the load current so that the load circuit can be prevented from being subjected to excessively large current.
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Mokuya Hirofumi
Taniguchi Mutuo
Anden Co., Ltd.
Hardy David
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