Semiconductor device manufacturing: process – Having selenium or tellurium elemental semiconductor component
Reexamination Certificate
2008-01-29
2008-01-29
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Having selenium or tellurium elemental semiconductor component
C257S042000, C257S043000, C257SE31027, C257SE31029, C438S084000, C438S085000, C438S104000, C501S152000, C117S008000
Reexamination Certificate
active
07323356
ABSTRACT:
Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor leasers, filed-effect transistors, or a hetero-bipolar transistors.
REFERENCES:
patent: 5530267 (1996-06-01), Brandle et al.
patent: 6275716 (2001-08-01), Tauber et al.
patent: 6878962 (2005-04-01), Kawasaki et al.
patent: 2002/0096687 (2002-07-01), Kuo et al.
patent: 2002-80222 (2002-03-01), None
Takano, Y., et al. “Single Crystal Growth of (LaO)CuS.” J. of Alloys & CMPDS. vol. 249 (1997): pp. 221-223.
Ishikawa, K., et al. “Preparation and Electrical Properties of (LaO)AgS and (LnO)CuS (Ln=La, Pr, or Nd).” J. Electrochem. Soc. vol. 138 (1991): pp. 1166-1170.
Ueda, K., et al. “Transparent p-type Semiconductor: LaCuOS Layered Oxysulfide.” Appl. Phys. Lett. vol. 77 (2000): pp. 2701-2703.
Ueda, K., et al. “Room-Temperature Excitons in Wide-Gap Layered-Oxysulfide Semiconductor: LaCuOS.” Appl. Phys. Lett. vol. 78 (2001): pp. 2333-2335.
Hidenori Hiramatsu et al., “Wide-gap p-gata Handotai LaCuOS no Epitaxial Seicho to Kobutsusei”, Dai 49 Kai Oyo Butsurigaku Kankei Rengo Koenkai Koen Yokoshu, Mar. 27, 2002 No. 2, p. 629. Cited in the PCT search report.
K. Ueda et al., “Room temperature exciton in wide-gaps layered-oxysulfide semiconductor: LaCuOS”, Applied Physics Science, Apr. 16, 2001 vol. 78, No. 16 pp. 2333-2335. cited in the PCT search report.
K. Ueda et al., “Transparent p-type semiconductor: LaCuOS layered oxysylfide”, App. Phys. Letter, Oct. 23, 2000, vol. 77, No. 17, pp. 2701 to 2703. Cited in the PCT search report.
D.O. Charkin et al., Russian Journal of Inorganic Chemistry, vol. 44, No. 6, 1999, pp. 833-837.
Kenji Ishikawa et al., J. Electrochem. Soc., vol. 138, No. 4, Apr. 1991, pp. 1166-1170.
Yoshiki Takano et al., Elsevier, Physica B 206 & 207 (1995) pp. 764-766.
Hidenori Hiramatsu et al., Journal of Applied Physics, vol. 91, No. 11, Jun. 1, 2002, pp. 9177-9181.
Kazushige Ueda et al., Elsevier, The Solid Film 411 (2002) pp. 115-118.
Kazushige Ueda et al., Journal of Applied Physics, vol. 91, No. 7, Apr. 1, 2002 pp. 4768-4770.
Hiramatsu Hidenori
Hirano Masahiro
Hosono Hideo
Orita Masahiro
Ota Hiromichi
Baumeister B. William
Japan Science and Technology Agency
Such Matthew W.
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2795763