Lithography using a new phase-shifting reticle

Details Lithography using a new phase-shifting reticle Lithography using a new phase-shifting reticle

1995-03-01

1997-05-27

Chapman, Mark

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430320, 430321, G03F 900

Patent

active

056331029

ABSTRACT:
Methods of forming a patterned layer using a reticle having a phase-shifting element and the reticles for making the patterns are disclosed. The methods of the present invention use a phase-shifting element to change the phase of the radiation exiting a reticle about 180.degree. out of phase compared to the radiation exiting the areas immediately adjacent to an edge of the phase-shifting element so that radiation from both areas near the edge destructively interfere with each other so as to cancel out one another thereby resulting in a substantially unexposed region on a semiconductor substrate. The present invention can be used to prevent exposing a large area by using a set of phase-shifting elements to form a grating or checkerboard area.

REFERENCES:
patent: 4890309 (1989-12-01), Smith et al.
patent: 5045417 (1991-09-01), Okamoto
patent: 5229255 (1993-07-01), White
"Transparent Phase-Shift Mask," The 51st Applied Physics Institue Lecture Conference, Autumn season, Sep. 26, 1990, JSAP Catalog No. AP901125-02, and English translation thereof, 2 pages.
N. Hasegawa, A. Imai, T. Terasawa, T. Tanaka, F. Murai. The Japan Society of Applied Physics and Related Societies "Extended Abstracts 29p-ZC-2, Submicron Litography Using Phase Mask (9): Halftone Phase Shifting Mask" and an English translation. Spring, 1991.
Watanabe, et al.; "Transparent Phase Shifting Mask"; IEDM; 1990; pp. 821-824.
Watanabe, et al.; "Transparent Phase Shift Mask"; Extended Abstracts (The 51st Autumn Meeting 1990); The Japan Society of Applied Physics 1990.

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