Lithography tool test patterns and method

Optics: measuring and testing – Lens or reflective image former testing

Reexamination Certificate

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Details

C430S005000, C430S022000, C430S030000

Reexamination Certificate

active

07057715

ABSTRACT:
Test patterns and a method for evaluating and adjusting the resolution of an electron beam lithography tool. The test patterns include multiple feature patterns that are repeated throughout the test pattern. Each feature pattern can be interleaved with horizontal and/or vertical line patterns that facilitate cleaving of a test substrate for three dimensional analysis of the developed image. Further, each feature pattern can comprise multiple sub-patterns. Each sub-pattern includes at least one feature having a size that varies from less than a nominal resolution limit of the lithography tool to greater than the nominal resolution limit. The lithography tool resolution can be evaluated by exposing a test pattern on a resist coated substrate, and analyzing the developed image.

REFERENCES:
patent: 4644637 (1987-02-01), Temple
patent: 5308682 (1994-05-01), Morikawa
patent: 5847818 (1998-12-01), Lin et al.
patent: 6765282 (2004-07-01), Schulz
patent: 2003/0165749 (2003-09-01), Fritze et al.
patent: 2004/0165194 (2004-08-01), Hansen

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