Lithography system, sensor and measuring method

Details Lithography system, sensor and measuring method Lithography system, sensor and measuring method

2011-01-11

2011-01-11

Berman, Jack I (Department: 2881)

Radiant energy

With charged particle beam deflection or focussing

With detector

C250S3960ML, C250S398000, C250S3960ML, C250S492100, C250S492300, C264S405000, C264S424000

Reexamination Certificate

active

07868300

ABSTRACT:
Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in whichthe charged particle beams are converted into light beams by using a converter element,using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams,electronically reading out resulting signals from said detectors after exposure thereof by said light beams,utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, andelectronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.

REFERENCES:
patent: 6791094 (2004-09-01), Olson et al.
patent: 1 505 630 (2005-02-01), None
patent: 1505630 (2005-02-01), None
patent: 2002-170767 (2002-06-01), None
patent: 2005-347054 (2005-12-01), None
patent: WO 98/54746 (1998-12-01), None

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