Lithography simulation method, mask pattern correction...

Details Lithography simulation method, mask pattern correction... Lithography simulation method, mask pattern correction...

2006-02-21

2006-02-21

Rutledge, D. (Department: 2851)

Photocopying

Projection printing and copying cameras

Step and repeat

C355S069000, C355S077000, C716S030000, C716S030000, C382S144000, C382S145000, C430S005000, C430S030000, C250S548000

Reexamination Certificate

active

07002665

ABSTRACT:
An aspect of the present invention provides simulation that includes dividing a surface of a substrate onto which light that is focused at an aperture angle by a projection lens is shone into a first region onto which all of the light strikes and a second region onto which a portion of the light strikes, calculating an intensity of the light shone onto the first region, and calculating an intensity of the light shone onto the second region.

REFERENCES:
patent: 6137901 (2000-10-01), Harazaki
patent: 6335981 (2002-01-01), Harazaki
patent: 6449387 (2002-09-01), Inui
patent: 6792591 (2004-09-01), Shi et al.
patent: 2002-6475 (2002-01-01), None
patent: 2002006475 (2002-01-01), None

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