Lithography mask and fabrication method thereof

Details Lithography mask and fabrication method thereof Lithography mask and fabrication method thereof

1997-02-03

1998-06-23

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430314, G03F 900

Patent

active

057703361

ABSTRACT:
A lithography mask and a method for fabricating a mask are disclosed. The method includes the steps of forming a plurality of insulating film patterns on a semiconductor substrate, forming a plurality of doped regions in the semiconductor substrate, forming a conductive layer on the doped regions and the insulating film patterns, and forming a plurality of passages through the semiconductor substrate. The lithography mask includes a semiconductor substrate, a plurality of patterns formed on the semiconductor substrate, a plurality of doped regions formed in the semiconductor substrate between the patterns, a plurality of trenches formed on a lower portion of the semiconductor substrate to expose the doped regions, and a plurality of first holes each penetrating a corresponding one of the doped regions.

REFERENCES:
patent: 5217830 (1993-06-01), Lowrey
patent: 5480747 (1996-01-01), Vasudev
patent: 5691089 (1997-11-01), Smayling

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