Lithography imaging tool and related photolithographic processes

Radiation imagery chemistry: process – composition – or product th – Imaged product – Multilayer

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430 22, 430 30, 430 13, 430 14, 430312, 430327, 2504911, 2504921, 2504922, 2504923, 437 8, 437 27, G03C 300

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050875370

ABSTRACT:
An apparatus and method for characterizing lithography imaging to quickly optimize a lithography process is described. The apparatus consists of two lithography masks for use with an optical stepper, ion-beam or x-ray lithography tool. The first mask is used for creating topography on the wafer substrate, and is patterned with groups of large elements arranged in orthogonal and angular directions. The second mask is used for defining a periodic pattern over the large elements. Preferably, the periodic pattern is in the same order of dimension as the critical element on the integrated circuit. A method is provided for characterizing lithography tools which do not have lithography masks such as an electron beam exposure tool.

REFERENCES:
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patent: 4564764 (1986-01-01), Yasuda et al.
patent: 4568189 (1986-02-01), Bass et al.
patent: 4590382 (1986-05-01), Tabata
patent: 4757207 (1988-07-01), Chappelow et al.
Behringer et al., "IBM Technical Disclosure Bulletin", vol. 26, No. 12, May 1984, Lithographic Registration Pattern.
Rottmann et al., IBM Technical Disclosure Bulletin, 1984, "Method for Lithographic Tool and Process Characterization".

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