Lithography exposure mask derived from nanocrystal precursors an

Details Lithography exposure mask derived from nanocrystal precursors an Lithography exposure mask derived from nanocrystal precursors an

1995-08-07

1997-09-23

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430324, 430330, 378 34, 378 35, G03F 900

Patent

active

056702795

ABSTRACT:
A high resolution exposure mask suitable for x-ray lithography is described in the present invention and a method of manufacturing the same. Nanocrystals of electron dense materials, preferably as a colloidal solution are applied to a surface of a low electron density substrate, so as to form features as fine as about 10 nanometers. The reduced melting and sintering temperatures associated with nanocrystals, compared with the bulk material allows for the use of more moderate processing conditions. Lessened interfacial stress between dissimilar layers results.

REFERENCES:
patent: 4515876 (1985-05-01), Yoshihara et al.
patent: 5051326 (1991-09-01), Celler et al.
patent: 5096791 (1992-03-01), Yahalom
patent: 5318687 (1994-06-01), Estes et al.

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