Lithographical mask for controlling the dimensions of resist pat

Details Lithographical mask for controlling the dimensions of resist pat Lithographical mask for controlling the dimensions of resist pat

1992-08-21

1993-10-26

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

378 35, 36447424, G03F 900

Patent

active

052565050

ABSTRACT:
A mask for transferring square and rectangular features having critical dimensions (CDs) close to the resolution limit of the exposure tool utilized to perform the transference is described. Intensity modulation lines having the opposite transparency as the rectangular feature to be transferred, and a width significantly less than the resolution of the exposure tool, are disposed within the rectangular feature. The intensity modulation lines have the affect of damping intensity levels on the resist layer in the center of the rectangular feature. As a result, the final CD measurement of the rectangular feature is within the CD tolerance of the original designed CD measurement. In addition, since modulation lines are have dimensions well below the resolution limit of the exposure tool, they are not seen in the final rectangular resist pattern.

REFERENCES:
patent: 4895780 (1990-01-01), Nissan-Cohen et al.

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