Lithographic template and method of formation and use

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Details

Other Related Categories

C430S311000, C430S312000, C430S313000

Type

Reexamination Certificate

Status

active

Patent number

07425392

Description

ABSTRACT:
A lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template is provided. The lithographic template (10) and the method of making comprises forming a transparent conductive layer (16) over a substrate (12). A SiCN layer (18) is formed over the transparent conductive layer (16), and a patterning layer (20) formed on the SiCN layer (18). The SiCN layer (18) is converted to an SiO2layer by applying an O2plasma (23). The SiO2layer prevents damage to the transparent conductive layer (16) during cleaning and provides a binding mechanism for the imprint release coating.

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Bharadwaj et al . (Oxidation Behavior of a Fully Dense Polymer-Derived Amorphous Silicon Carbonitride Ceramic; Journal of the American Ceramic Society 87 (3), 483-486).
Wolf et al. (Silicon Processing for the VLSI Era; vol. 1; 1986; Lattice Press).

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