Lithographic template and method of formation and use

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S311000, C430S319000, C430S320000, C430S322000

Reexamination Certificate

active

07083880

ABSTRACT:
This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), a transparent conductive layer (16) formed on a surface (14) of the substrate (12) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer (20) formed on a surface (18) of the transparent conductive layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (30).

REFERENCES:
patent: 5817242 (1998-10-01), Biebuyck et al.
patent: 5952127 (1999-09-01), Yamanaka
patent: 6004699 (1999-12-01), Yasuzato et al.
patent: 6387787 (2002-05-01), Mancini et al.
patent: 6635393 (2003-10-01), Pierrat
Gordon, “Criteria For Choosing Transparent Conductors,” MRS Bulletin/Aug. 2000, XP-01087787, pp. 52-57.
Kiuchi et al., “Titanium Nitride for Transparent Conductors,” 1994 American Institute of Physics, Applied Physics Letters, Feb. 21, 1994, XP000425897, pp. 1048-1049.
Resnick et al., “New Methods for Fabricating Step and Flash Imprint Lithography Templates,” Proceedings of SPIE vol. 4608 (2002), SPIE, XP-002276868, pp. 176-181.
Ben-Shalom et al., “SnO2Transparent Conductor Films Produced by Filtered Vacuum Arc Deposition,” Elsevier Sequoia, Dec. 15, 1993, XP000415509, pp. 20-26.
Park et al., “Characterization of SnO2Films on Glass by Transmission Electron Microscopy,” Elsevier Science S.A., 2000, pp. 7-11.
Minami et al, “Highly Transparent and Conductive Zn2In2O5Thin Films Prepared by RF Magnetron Sputtering,” Jpn. J. Appl. Phys. vol. 34 (1995), pp. L971-L974.
Dobkin “Plasma-Enhanced Deposition from TEOS and Oxygen”; http://www.batnet.com/enigmatics/semiconductor—processing/CVD—Fundamentals/Films/PECVD—TEOS.html.
Wolf et al; “Low Pressure Chemical Vapor Deposition Reactors”; Silicon Processing for the VLSI Era; vol. 1: Process Technology, Second Edition, Section 6.2.4; Sunset Beach, California; pp. 172-173.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Lithographic template and method of formation and use does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lithographic template and method of formation and use, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithographic template and method of formation and use will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3709668

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.