Lithographic structure and method for making field emitters

Electric lamp or space discharge component or device manufacturi – Process – With assembly or disassembly

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

445 50, H01J 902

Patent

active

060273887

ABSTRACT:
A mask structure may be formed on a field emitter substrate for use in forming emitter wells on and in the substrate. The mask structure may be formed from a multilayered structure on the surface of the substrate using a laser lithography process. From the substrate up, the multilayered structure may include an antireflective coating, a photoresistive layer, an optional etch resistant layer between the antireflective coating and the photoresistive layer, and an optional second antireflective coating between the optional etch resistant layer and the photoresistive layer. The pattern of the mask structure may be transferred to the multilayer structure by exposing the photoresistive layer to laser light. The antireflective coatings may reduce the amount of stray laser light that reflects off the substrate and onto the back of the photoresistive layer. Development of the photoresistive layer following exposure to laser light may be monitored and selectively arrested to form a mask structure with a selective pitch. The antireflective coating may be etched optionally so that it is undercut beneath the overlying etch resistant layer or photoresistive layer to aid in the formation of emitters using a veil field emitter process or an etched gate process.

REFERENCES:
patent: 5219788 (1993-06-01), Abernathey et al.
patent: 5328560 (1994-07-01), Hanawa et al.
patent: 5378182 (1995-01-01), Liu
patent: 5528099 (1996-06-01), Xie et al.
patent: 5547787 (1996-08-01), Ito et al.
patent: 5576359 (1996-11-01), Urano et al.
patent: 5688158 (1997-11-01), Jones et al.
patent: 5771098 (1998-06-01), Ghosh et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Lithographic structure and method for making field emitters does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lithographic structure and method for making field emitters, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithographic structure and method for making field emitters will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-516218

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.