Lithographic resist composition for a lift-off process

Details Lithographic resist composition for a lift-off process Lithographic resist composition for a lift-off process

1979-12-03

1981-08-18

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Diazo reproduction, process, composition, or product

Composition or product which contains radiation sensitive...

430192, 430193, 430315, 430326, 430329, 430330, G03C 154, G03C 160, G03C 500

Patent

active

042847060

ABSTRACT:
Lithographic resist compositions are provided which permit an improved lift-off process in which the deposition mask with apertures has the desirable negative slope or overhang. The resist composition comprises a phenolic-aldehyde resin, a photosensitizer and Meldrum's diazo, or Meldrum's acid or suitable analogs thereof as a profile modifying agent. The profile modifying agents useful in the present invention have the formula: ##STR1## wherein R.sub.1 is C.sub.1 to C.sub.20 alkyl or aryl, R.sub.2 is H, C.sub.1 to C.sub.20 alkyl or aryl, or together R.sub.1 and R.sub.2 are cycloalkyl, A is N or H.

REFERENCES:
patent: 3046116 (1962-07-01), Schmidt
patent: 3201239 (1965-08-01), Neugebauer et al.
patent: 3495979 (1970-02-01), Laridon et al.
patent: 3661582 (1972-05-01), Broyde
patent: 3666473 (1972-05-01), Colom et al.
patent: 3849136 (1974-11-01), Grebe
patent: 3950173 (1976-04-01), Ross et al.
patent: 3982943 (1976-09-01), Feng et al.
patent: 4093461 (1978-06-01), Loprest et al.
patent: 4115120 (1978-09-01), Dyer et al.
patent: 4123279 (1978-10-01), Kobayashi
Kammula, S., et al., J. Org. Chem., vol. 42, No. 17, pp. 2931-2932, 1977.
Dinaburg, M. S., "Photosensitive Diazo Compounds," Focal Press, pp. 31-32 and 181-182, 1964.

Affiliated with

Also associated with

Rating

Lithographic resist composition for a lift-off process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lithographic resist composition for a lift-off process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithographic resist composition for a lift-off process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-38111