Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-10-03
2006-10-03
Lee, John R. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S559410, C430S322000, C430S396000, C355S030000, C355S053000, C355S067000
Reexamination Certificate
active
07115886
ABSTRACT:
In-situ cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250 nm, in the presence of molecular oxygen. Generally, the space will be purged with an ozoneless purge gas which contains a small amount of molecular oxygen in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of molecular oxygen into the space.
REFERENCES:
patent: 6252648 (2001-06-01), Hase et al.
patent: 6288769 (2001-09-01), Akagawa et al.
patent: 6387602 (2002-05-01), Hayden et al.
patent: 6394109 (2002-05-01), Somekh
patent: 6411368 (2002-06-01), Matsumoto et al.
patent: 6724460 (2004-04-01), Van Schaik et al.
patent: 2001/0026354 (2001-10-01), Aoki
patent: 2001/0030740 (2001-10-01), Mori et al.
patent: 0 660 188 (1995-06-01), None
patent: 2001-293442 (2001-10-01), None
Bloomstein et al., “UV Cleaning of Contaminated 157-nm Reticles,”Proceedings of SPIE4346:669-375 (2001).
Liberman, “Reticle Materials Testing Facilities at MIT Lincoln Laboratory,” presented Mar. 9, 2000.
Bloomstein et al., “UV Cleaning of Contaminated Reticles,” presented Aug. 1, 2000.
Bloomstein et al., “Studies of Laser Induced Contamination and Cleaning” presented Nov. 21, 2000.
Bloomstein et al., “Optical Materials and Coatings at 157 nm,”Proceedings of SPIE3676:342-349 (1999).
Bloomstein et al., “Laser Cleaning of Optical Elements in 157-nm Lithography,”Proceedings of SPIE4000:1537-1545 (2000).
Bloomstein et al., “Controlled Contamination of Optics Under 157-nm Laser Irradiation,”Proceedings of SPIE4346:685-694 (2001).
Korean Office Action issued in Korean Application No. 10-2002-0071225 dated Oct. 31, 2005.
EPO Communication in EP Patent Appl. No. 02 257 914-8, dated Jan. 10, 2006.
Koster Norbertus Benedictus
Meiling Hans
Mertens Bastiaan Matthias
Van Schaik Willem
ASML Netherlands B.V.
Hashmi Zia R.
Lee John R.
Pillsbury Winthrop Shaw & Pittman LLP
LandOfFree
Lithographic projection apparatus, device manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lithographic projection apparatus, device manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithographic projection apparatus, device manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3674738