Lithographic processing method and device manufactured thereby

Radiation imagery chemistry: process – composition – or product th – Plural exposure steps

Reexamination Certificate

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C430S005000, C430S322000, C430S311000

Reexamination Certificate

active

07374869

ABSTRACT:
A lithographic double exposure processing method for providing to a device layer a pattern comprises the steps of expanding each feature of a first mask pattern and second mask pattern with a preselected dilatation distance before the first and second exposure steps, resist-processing the exposed radiation sensitive layer of a substrate to provide resist-processed features corresponding to said pattern whereby each resist-processed feature is expanded with respect to its nominal size, and shrinking said resist-processed features over a preselected shrinking distance by applying supplementary resist-processing to said resist-processed features.

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patent: 2003/0157808 (2003-08-01), Lin et al.
K. Aramaki et al., “Techniques to Print sub-0.2 μm Contact Holes,”Advances in Resist Technology and Processing, vol. 3999, 2000, pp. 738-749, XP002256207.
Aramaki et al., “Techniques to Print sub-0.2 μm Contact Holes,”Proceedings of SPIE, Advances in Resist Technology and Processing XVII3999:738-749 (2000).

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