Lithographic process for producing small mask apertures and prod

Details Lithographic process for producing small mask apertures and prod Lithographic process for producing small mask apertures and prod

1992-09-29

1995-04-04

Kight, III, John

Radiation imagery chemistry: process, composition, or product th

Imaged product

Including resin or synthetic polymer

430 5, 430 14, 430322, 430324, 430325, 430328, G03F 900

Patent

active

054036852

ABSTRACT:
Sub-micron features are defined photo-lithographically by combining phase-shifting techniques with conventional photo lithographic techniques. In a first step, phase-shifting edges are defined in a photoresist layer. Dark-bands develop at the phase-shifting edges due to wavefront interference of an illuminating radiation in a subsequent exposure step. Development leaves behind sub-micron sections of photoresist which were covered by the dark-band regions. The dark-band sections are hardened and overcoated with a new layer of photoresist. A second pattern is projected onto the second layer of photoresist using conventional techniques. The second pattern is developed so as to create features having dimensions reduced by parts of the dark-band sections previously developed.

REFERENCES:
patent: 5194346 (1993-03-01), Rolfson et al.
patent: 5208125 (1993-05-01), Lowrey et al.
patent: 5276551 (1994-01-01), Nakagawa
Tabuchi et al.; Novel 0.2 .mu.m i-Line Lithograhy by Phase Shifting on the Substrate; 1991; IEDM; Technical Digest.

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