Lithographic method of manufacturing a device

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S394000

Reexamination Certificate

active

07659041

ABSTRACT:
For lithographically manufacturing a device with a very high density, a design mask pattern (120) is distributed on a number of sub-patterns (120a, 120b, 120c) by means of a new method. The sub-patterns do not comprise “forbidden” structures (135) and can be transferred by conventional apparatus to a substrate layer to be patterned. For the transfer, a new stack of layers is used, which comprise a pair of a processing layer (22; 26) and an inorganic anti-reflection layer (24; 28) for each sub-pattern. After a first processing layer (26) has been patterned with a first sub-pattern, it is coated with a new resist layer (30) which is exposed with a second sub-pattern, and a second processing layer (22) under the first processing layer is processed with the second sub-pattern.

REFERENCES:
patent: 4251160 (1981-02-01), Bouwhuis et al.
patent: 4356392 (1982-10-01), Wittekoek et al.
patent: 4737823 (1988-04-01), Bouwer et al.
patent: 4778275 (1988-10-01), Van Den Brink et al.
patent: 5191200 (1993-03-01), Van Der Werf et al.
patent: 5472814 (1995-12-01), Lin
patent: 5716758 (1998-02-01), Bae et al.
patent: 5784292 (1998-07-01), Kumar
patent: 6541165 (2003-04-01), Pierrat
patent: 6593064 (2003-07-01), Gelbart
patent: 6670695 (2003-12-01), Gau et al.
patent: 6807662 (2004-10-01), Toublan et al.
patent: 2004/0268282 (2004-12-01), Rittman et al.
patent: 0433467 (1991-06-01), None
patent: 0680624 (1997-03-01), None
patent: 0498499 (1997-08-01), None
patent: 0877415 (1998-11-01), None
patent: 0534463 (2000-09-01), None
patent: 9417450 (1994-08-01), None
patent: 9947981 (1998-03-01), None
patent: 02095498 (2002-11-01), None
S. Nakao et al, “Extension of KrF Lithography to Sub-50 nm Pattern Formation”, SPIE, vol. 4000, p. 358, 2000.
Levenson et al, “Improving Resolution in Photolithography With a Phase-Shifting Mask” IEEE Transactions on Electron Devices, vol. Ed-29, No. 12, p. 25-32, December 1982.
Progler et al, Zernike Coefficients: Are They Really Enough?, Proceedings of the SPIE, vol. 4000, p. 40-46, 2000.
U.S. Appl. No. 09/634,713, Rittman.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Lithographic method of manufacturing a device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Lithographic method of manufacturing a device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithographic method of manufacturing a device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4235449

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.