Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1995-01-23
1996-04-09
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430322, 430324, 430394, G03F 900
Patent
active
055060803
ABSTRACT:
A method of forming a substantially defect-free mask for optical and phase-shift lithography. The method involves depositing a transfer layer on a mask layer deposited on a transmissive substrate, forming in the transfer layer a mask image to be defined in the mask layer, inspecting the image formed in the transfer layer, repairing the image formed in the transfer image, and transferring the corrected image from the transfer layer into the mask layer. The repair of the transfer layer is accomplished by removing unwanted portions of the transfer layer followed by filling any unwanted voids therein with a selected material. Preferably, the fill material has the same desirable etching and/or optical characteristics as the surrounding transfer layer. However, any material that is substantially opaque to the radiation used to transfer the image from the transfer layer to the mask layer can be successfully employed.
REFERENCES:
patent: 3506441 (1970-04-01), Gottfried
patent: 4698236 (1987-10-01), Kellogg et al.
patent: 4820898 (1989-04-01), Slingerland
patent: 4851097 (1989-07-01), Hattori et al.
patent: 4950498 (1990-08-01), Kaito
patent: 5246799 (1993-09-01), Pierrat
patent: 5362591 (1994-11-01), Imai et al.
patent: 5382484 (1995-01-01), Hosono
Repair of Mask-Caused Defects In A Positive-Working Photoresist Pattern IBM Technical Disclosue Bulletin, vol. 8, No. 6, Nov. 1965, pp. 861-862.
Fabrication Of Defect-Free Masks IBM Technical Disclosue Bulletin, vol. 9, No. 10, Mar. 1967, pp. 1381-1382.
Blocking Process For Photoresist IBM Technical Disclosue Bulletin, vol. 16, No. 1, Jun. 1973, p. 47.
Adair William J.
Joyce Willam C.
Lynch James J.
O'Grady David S.
Ohlson Jean T.
Internation Business Machines Corp.
Meier Lawrence
Rosasco S.
LandOfFree
Lithographic mask repair and fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lithographic mask repair and fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithographic mask repair and fabrication method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-137973