Lithographic mask and exposure apparatus using the same

Details Lithographic mask and exposure apparatus using the same Lithographic mask and exposure apparatus using the same

1996-01-26

1997-06-24

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430312, 430313, 430324, 430394, 378 34, 378 35, G03F 900

Patent

active

056415931

ABSTRACT:
A reflection type mask includes a reflective portion effective to reflect soft X-rays or vacuum ultraviolet rays, and an absorbent material pattern formed on the reflecting portion, wherein, when the wavelength of the soft X-rays or vacuum ultraviolet rays is denoted by .lambda. and the optical constant of the material constituting the absorbent material pattern is denoted by 1-.delta.-ik (where .delta. and k are real numbers while i is an imaginary number), a relation 0.29<k/.vertline..delta..vertline.<1.12 is satisfied, and wherein the thickness d of the absorbent pattern satisfies a relation 3.delta./(16.vertline..delta..vertline.)<d<5.lambda./(16.vertline..delta.. vertline.).

REFERENCES:
patent: 4890309 (1989-12-01), Smith et al.
patent: 5328784 (1994-07-01), Fukuda
patent: 5399448 (1995-03-01), Nagata et al.
Atomic Data and Nuclear Data Tables 27, 1-144, 1-82 (1982), B. L. Henke et al., "Low-Energy X-Ray Interaction Coefficients: Photoabsorption, Scattering, and Reflection.".

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