Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1993-12-10
1995-06-13
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430311, 430312, 430394, G03F 900
Patent
active
054241545
ABSTRACT:
A method of enhancing the lithographic resolution of randomly laid out isolated structures is disclosed. A first mask comprises an active layer with isolated features such as gates. Portions of the active layer have a reduced dimension typical of periodic structures. The first mask additionally has complementary features provided along side the reduced active features to provide periodicity. In this way, the resolution of the lithographic process is enhanced, and other enhanced resolution technologies additionally can be used to best advantage to form a patterned photosensitive layer having isolated features of reduced width. The photosensitive layer is then exposed to a second mask which exposes the complementary features so that they are removed from the latent image in the photosensitive layer. This second exposure also further improves resolution by enhancing the contrast between exposed and unexposed regions. A method is disclosed for automatically providing random logic device layouts having the complementary features, as well as for providing a layout for the second mask.
REFERENCES:
patent: 5308741 (1994-05-01), Kemp
M. Helm, W. Kavanaugh, B. K. Liew, C. Petti, A. Stolmeijer, M. Ben-tzur, J. Bornstein, J. Lilygren, W. Ting, P. Trammel, J. Allan, G. Gray, M. Hartranft, S. Radigan, J. K. Shanmugan, R. Shrivastava, "A Low Cost Microprocessor Compatible, 18.4 .mu.m.sup.2, 6-T Bulk Cell Technology for High Speed SRAMS", Cypress Semiconductor Corp., pp. 65-66, 1993 Symposium On VLSI Technology Digest of Technical Papers, May 17-19, 1993, The Japan Society of Applied Physics and The IEEE Electron Devices Society.
Intel Corporation
Rosasco S.
LandOfFree
Lithographic emhancement method and apparatus for randomly space does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lithographic emhancement method and apparatus for randomly space, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithographic emhancement method and apparatus for randomly space will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1308290