Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-01-24
2006-01-24
Nguyen, Kiet T. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
Reexamination Certificate
active
06989544
ABSTRACT:
The transmission or reflection loss due to surface contamination of a mask is predicted as a function of position on the mask and time. At the time of an exposure compensation for the transmission or reflection loss is effected using a device capable of adjusting the beam intensity across the length of an exposure field.
REFERENCES:
patent: 4460270 (1984-07-01), Watai et al.
patent: 4541715 (1985-09-01), Akiyama et al.
patent: 5171965 (1992-12-01), Suzuki et al.
patent: 6268904 (2001-07-01), Mori et al.
patent: 6542220 (2003-04-01), Schrijver et al.
patent: 0 833 193 (1998-04-01), None
patent: 1 209 526 (2002-05-01), None
patent: 60188950 (1985-09-01), None
patent: 11-260288 (1999-09-01), None
ASML Netherlands B.V.
Nguyen Kiet T.
Pillsbury Winthrop Shaw & Pittman LLP
LandOfFree
Lithographic apparatus, device manufacturing method, device... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lithographic apparatus, device manufacturing method, device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithographic apparatus, device manufacturing method, device... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3559809