Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-11-01
2005-11-01
Lee, John R. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492200, C250S492230, C250S492300, C430S394000
Reexamination Certificate
active
06960775
ABSTRACT:
A device manufacturing method using lithographic apparatus, in which method a patterned beam of radiation is projected on to a target portion of a substrate. Prior to exposing the substrate to the patterned beam of radiation a beam of compensating radiation is irradiated on to a predetermined area of the substrate, the beam of compensating radiation having an intensity which varies across said predetermined area. In the described embodiment the beam of compensating radiation is applied to an annular edge region of the substrate and has an intensity which is tilted across the cross-section of the beam so as to increase or decrease in intensity towards the edge of the substrate. This is done to improve the critical dimension (CD) uniformity across the substrate.
REFERENCES:
patent: 5965306 (1999-10-01), Mansfield et al.
patent: 6132940 (2000-10-01), Mih et al.
patent: 6404499 (2002-06-01), Stoeldraijer et al.
patent: 6526164 (2003-02-01), Mansfield et al.
patent: 6534221 (2003-03-01), Lee et al.
patent: 6553562 (2003-04-01), Capodieci et al.
patent: 6607863 (2003-08-01), Irie
patent: 6627378 (2003-09-01), Koh
patent: 6765712 (2004-07-01), Van Dijsseldonk et al.
patent: 6777140 (2004-08-01), Singh et al.
patent: 6809809 (2004-10-01), Kinney et al.
patent: 6819450 (2004-11-01), Jolley et al.
patent: 6864041 (2005-03-01), Brown et al.
patent: 2002/0164546 (2002-11-01), Brown et al.
patent: 2003/0127607 (2003-07-01), Van Der Veen
patent: 2003/0165749 (2003-09-01), Fritze et al.
patent: 2003/0223050 (2003-12-01), Fritze et al.
patent: 2004/0214094 (2004-10-01), Kim et al.
Carpaij Rene Hubert Jacobus
Van Der Laan Hans
ASML Netherlands B.V.
Lee John R.
Pillsbury Winthrop Shaw & Pittman LLP
Souw Bernard E.
LandOfFree
Lithographic apparatus, device manufacturing method and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lithographic apparatus, device manufacturing method and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithographic apparatus, device manufacturing method and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3501042