Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2006-08-22
2009-06-09
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S020000, C117S032000, C117S948000, C310S31300R, C310S344000
Reexamination Certificate
active
07544246
ABSTRACT:
In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 1650° C. for at least 4 hours, whereby in a lithium tantalate (LT) substrate, sparks are prevented from being generated by the charge up of an electric charge on the substrate surface, and thereby destruction of a comb pattern formed on the substrate surface and breaks or the like in the LT substrate are prevented.
REFERENCES:
patent: 5359452 (1994-10-01), Nitanda et al.
patent: 5436757 (1995-07-01), Okazaki et al.
patent: 5517942 (1996-05-01), Fukuda et al.
patent: 5521750 (1996-05-01), Onoe et al.
patent: 5539569 (1996-07-01), Fukuda et al.
patent: 5650006 (1997-07-01), Kawaguchi et al.
patent: 5844347 (1998-12-01), Takayama et al.
patent: 6310423 (2001-10-01), Tanaka et al.
patent: 6319430 (2001-11-01), Bordui et al.
patent: 6392234 (2002-05-01), Diekmann
patent: 6628178 (2003-09-01), Uchikoba
patent: 2002/0011568 (2002-01-01), Diekmann
patent: 2004/0163596 (2004-08-01), Miles et al.
patent: 2004/0255842 (2004-12-01), Kajigaya et al.
patent: 2006/0169196 (2006-08-01), Shiono
patent: 2006/0283372 (2006-12-01), Kajigaya et al.
patent: 2006/0283375 (2006-12-01), Kajigaya et al.
patent: 2006/0292706 (2006-12-01), Tokuda et al.
patent: 2007/0006797 (2007-01-01), Kajigaya et al.
patent: 0 921 215 (1999-06-01), None
patent: 0 893 515 (2003-11-01), None
patent: 62078196 (1987-04-01), None
patent: 11-92147 (1989-08-01), None
patent: 5-124897 (1993-05-01), None
patent: 52-53800 (1997-04-01), None
patent: 11-236298 (1999-08-01), None
patent: 2002111420 (2002-04-01), None
patent: 2004-35396 (2004-02-01), None
patent: WO 01/26886 (2001-04-01), None
patent: WO 01/33260 (2001-05-01), None
patent: WO 2004/002891 (2004-01-01), None
Albert Ballman “Growth of Piezoelectric and Ferroelectric Materials by the Czochralski Technique” Journal of the American Ceramic Society, vol. 48, No. 2, Feb. 1965, pp. 112-113.
S. Youssef et al., “Characterization of LiTaO3 Thin. Films Fabricated by Sol-Gel Technique”, Jan. 2007, Elsevier Science Publishers B.V., vol. 38 Issue 1, pp. 63-66 (Abstract enclosed).
Derwent-ACC-No. 1979-20670B; Derwent-Week: 197911, Lithium Tanatlite Dielectric Material for use in Electronics . . . .
“Transparent Conducting Film Technology”, Japan Society for the Promotion of Science. Ohm Co. (1999) pp. 55-57.
Kajigaya Tomio
Kakuta Takashi
Katten Muchin & Rosenman LLP
Kunemund Robert M
Rao G. Nagesh
Sumitomo Metal & Mining Co., Ltd.
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