Lithium tantalate substrate and method of manufacturing same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Reexamination Certificate

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C117S020000, C117S032000, C117S948000, C310S31300R, C310S344000

Reexamination Certificate

active

07544248

ABSTRACT:
In a process for manufacturing a LT substrate from a LT crystal, after growing the crystal, a LT substrate in ingot form is imbedded in carbon power, or is place in a carbon vessel, and heat treated is conducted at a maintained temperature of between 650° C. and 1650° C. for at least 4 hours, whereby in a lithium tantalate (LT) substrate, sparks are prevented from being generated by the charge up of an electric charge on the substrate surface, and thereby destruction of a comb pattern formed on the substrate surface and breaks or the like in the LT substrate are prevented.

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