Lithium counterdoped silicon solar cell

Details Lithium counterdoped silicon solar cell Lithium counterdoped silicon solar cell

1984-11-07

1986-08-26

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

29572, 29576B, 148 15, 357 30, 357 91, H01L 3106, H01L 3118

Patent

active

046084525

ABSTRACT:
The resistance to radiation damage of an n.sup.+ p boron doped silicon solar cell is improved by lithium counterdoping. Even though lithium is an n-dopant in silicon, the lithium is introduced in small enough quantities so that the cell base remains p-type.
The lithium is introduced into the solar cell wafer 10 by implantation of lithium ions whose energy is about 50 keV. After this lithium implantation, the wafer is annealed in a nitrogen atmosphere at 375.degree. C. for two hours.

REFERENCES:
patent: 3471924 (1969-10-01), Iles
patent: 3490965 (1970-01-01), Webb
patent: 4147563 (1979-04-01), Narayan et al.
I. Weinberg et al., Appl. Phys. Lett., vol. 44, pp. 1071-1073 (Jun. 1984).

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