Gas and liquid contact apparatus – With external supply or removal of heat – Temperature or humidity sensor
Patent
1994-07-25
1996-05-28
Miles, Tim R.
Gas and liquid contact apparatus
With external supply or removal of heat
Temperature or humidity sensor
261142, 261131, 2611221, 261153, 261 231, B01F 304
Patent
active
055208584
DESCRIPTION:
BRIEF SUMMARY
This application is a 371 of PCT/JP93/01353 09/21/93.
TECHNICAL FIELD
This invention relates to a liquid vaporizing apparatus for vaporizing liquid, and more particularly to a liquid vaporizing apparatus for use in a chemical gas-phase growth process for manufacturing semiconductors.
BACKGROUND ART
As a conventional liquid vaporizing apparatus, description will be made about a chemical gas-phase growth apparatus that vaporizes liquid material to use it as reaction gas so as to form a silicon oxide film, and, more particularly, about a liquid vaporizing apparatus for use in a process which uses a reaction gas consisting of gas formed by vaporizing tetraethylor-thosilicate (hereinafter called "TEOS"), a gas for adding P (phosphorus) into the film and formed by vaporizing trimethyl orthophosphate (hereinafter called "TMPO"), a gas for adding B (boron) into the film and formed by vaporizing triethyl borate (hereinafter called "TEB"), nitrogen gas and partially-ozonized oxygen gas, the liquid vaporizing apparatus vaporizing liquid by flowing the gas into the liquid heated and maintained higher than the room temperature.
As the foregoing chemical gas-phase growth apparatus, a chemical gas-phase growth apparatus for forming a silicon oxide film will be described. As a vaporizer, a vaporizer will be described in which the gas flows into liquid heated and maintained to a temperature higher than the room temperature, so as to vaporize the liquid by bubbling.
First, film forming reactions to be realized in the conventional chemical gas-phase growth apparatus will now be described. A chemical gas-phase growth apparatus of the foregoing type is constituted, for example, as shown in FIG. 50. The foregoing chemical gas-phase growth apparatus will now be described with reference to the foregoing figure. Referring to FIG. 50, the conventional chemical gas-phase growth apparatus comprises: a reaction chamber i for forming a film on a semiconductor wafer (omitted from illustration); an oxygen-gas supply pipe 2; an oxygen-gas flow-rate adjuster 3 for measuring and adjusting the flow rate of the oxygen gas flowing through the oxygen-gas supply pipe 2; an ozone generator 4 for ozonizing a portion of the oxygen gas; an ozone-gas introduction pipe 5 for supplying, to the reaction chamber 1, the partially-ozonized oxygen gas from the ozone generator 4; a liquid vaporizing apparatus 6 to be described later; a reaction-gas introduction pipe 7 for supplying, to the reaction chamber 1, the reaction gas from the liquid vaporizing apparatus 6; a heater 8 for heating and maintaining the hot state of the reaction-gas introduction pipe 7; and an exhaust pipe 9 for discharging the gas from the reaction chamber 1.
In the thus-constituted conventional chemical gas-phase growth apparatus, the ozone gas from the ozone-gas introduction pipe 5 and the reaction gas from the reaction-gas introduction pipe 7 are supplied onto a semiconductor wafer (omitted from illustration) heated and maintained by a wafer stage (omitted from illustration) so that they are made to react with each other. Thus, a film (omitted from illustration) is, by the reaction, formed on the semiconductor wafer, while the gas is, after the reaction, discharged outside from the reaction chamber 1 through the reaction pipe 9.
Then, a liquid vaporizing apparatus 6 of the foregoing conventional chemical gas-phase growth apparatus shown in FIG. 50 will now be described. A liquid vaporizing apparatus of the foregoing type is constituted, for example, as shown in FIG. 51 which is a view showing the system of piping of the same. Then, the liquid vaporizing apparatus will now be described with reference to the foregoing figure. Referring to FIG. 51, the liquid vaporizing apparatus 6 comprises: a plurality of vaporizers 10a, 10b and 10c for vaporizing TEOS liquid, TMPO liquid and TEB liquid; nitrogen-gas flow rate adjusters 11a, 11b and 11c for measuring and adjusting the flow rate of the nitrogen gas to be supplied to the vaporizers 10a, 10b and 10c; a nitrogen-gas flow rate adjust
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Suenaga Takayuki
Tsutahara Kouichirou
Yamaguchi Tooru
Miles Tim R.
Mitsubishi Denki & Kabushiki Kaisha
Ryoden Semiconductor System Engineering Corporation
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