Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Patent
1994-03-31
1996-05-07
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Liquid phase epitaxial growth
117936, 437130, H01L 2120
Patent
active
055135935
ABSTRACT:
To produce a layer by liquid-phase heteroepitaxy a molten metal serving as the solvent is saturated at a first temperature with substrate material and compounded with layer material. The solution and the substrate are then separatly "overheated" to a second, higher temperature and then brought into contact with each other. Due to the overheating a negative thermodynamic driving force results for the epitaxy which compensates the positive driving force for the epitaxy at least in part due to the different interfacial energies between layer material and solution and substrate material and solution. The degree of overheating determines the resulting total driving force for the epitaxy which may be reduced to zero. Very thin layers, down to a monolayer thickness may be grown in this way from the solution with a layer thickness exact to a monolayer with no dislocation.
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Albrecht Martin
Hansson Per-Ove
Breneman R. Bruce
Fleck Linda J.
Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
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