Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Reexamination Certificate
2006-04-04
2006-04-04
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Liquid phase epitaxial growth
C117S057000, C117S059000, C117S060000, C117S061000, C117S911000, C427S430100
Reexamination Certificate
active
07022181
ABSTRACT:
In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.
REFERENCES:
patent: 2759803 (1956-08-01), Dauncey
patent: 3648653 (1972-03-01), Vehse
patent: 4191365 (1980-03-01), O'Neill
patent: 4243472 (1981-01-01), O'Neill
patent: 4293371 (1981-10-01), Kokta et al.
patent: 5603762 (1997-02-01), Kokune et al.
patent: 5902394 (1999-05-01), Burkhart et al.
patent: 6190937 (2001-02-01), Nakagawa et al.
patent: 6258698 (2001-07-01), Iwasaki et al.
patent: 2002/0108559 (2002-08-01), Iwane et al.
patent: 1201793 (2002-05-01), None
patent: 57095893 (1982-06-01), None
patent: 7-315983 (1995-12-01), None
patent: 10-189924 (1998-07-01), None
patent: 11199376 (1999-07-01), None
patent: 11228280 (1999-08-01), None
patent: WO 00/71786 (2000-11-01), None
European Patent Office. English Abstract of JP 11-228280 (1999).
European Patent Office. English Abstract of JP 11-199376 (1999).
Patent Abstracts of Japan. English Abstract of JP 57-095893A (1982).
Journal of Crystal Growth 31 (1975) 358-365, E.A. Giess, “Liquid Phase Epitaxy of Magnetic Garnets”.
Iwane Masaaki
Mizutani Masaki
Nakagawa Katsumi
Nishida Shoji
Saito Tetsuro
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Kunemund Robert
Song Matthew J.
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