Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Reexamination Certificate
2005-03-29
2005-03-29
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Liquid phase epitaxial growth
C117S200000, C117S206000
Reexamination Certificate
active
06872248
ABSTRACT:
A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.
REFERENCES:
patent: 6429035 (2002-08-01), Nakagawa et al.
patent: 5-330983 (1993-12-01), None
K.J. Weber et al., “Prevention of Oxide Formation During Liquid Phase Epitaxy of Silicon,” 66(10)Appl. Phys. Lett.1243-1245 (1995).
Mizutani Masaki
Nakagawa Katsumi
Nishida Shoji
Saito Tetsuro
Shoji Tatsumi
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Hiteshew Felisa
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