Liquid phase growth method for silicon crystal,...

Details Liquid phase growth method for silicon crystal,... Liquid phase growth method for silicon crystal,...

2006-10-10

2006-10-10

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

C117S011000, C117S059000, C117S060000, C117S064000, C117S077000, C117S934000

Reexamination Certificate

active

07118625

ABSTRACT:
With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is supplied to the solvent after at least a part of the gas is decomposed by application of energy thereto. In this manner, a liquid phase growth method for a silicon crystal, the method capable of achieving continuous growth and suitable for mass production, a manufacturing method for a solar cell and a liquid phase growth apparatus for a silicon crystal are provided.

REFERENCES:
patent: 4571448 (1986-02-01), Barnett
patent: 6391108 (2002-05-01), Nishida et al.
patent: 22-38205 (1974-02-01), None
patent: 58-89874 (1983-05-01), None
patent: 11-292693 (1999-10-01), None

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