Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Reexamination Certificate
2005-10-04
2005-10-04
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Liquid phase epitaxial growth
C117S013000, C117S056000
Reexamination Certificate
active
06951585
ABSTRACT:
A liquid-phase growth method for immersing a polycrystalline substrate in a melt in a crucible wherein crystal ingredients are dissolved, thereby growing poly crystals upon the substrate, comprises a first step for growing poly crystals to a predetermined thickness, and a second step for melting back a part of the poly crystals grown in the first step in the melt, wherein the relative position between the substrate and melt is changed between the first step and second step, bringing melt with different temperature into contact with the polycrystalline surface. The obtained poly crystals have properties rivaling those of poly crystals used in conventional solar cells but with little risk of trouble such as line breakage of grid electrodes in application to solar cells, and can be obtained in great quantities at low costs.
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Haruo Itoh et al., “Characterization of Silicon Layers Epitaxially Grown on Metallurgical-Grad Polychrystalline Substrates,” 45J. Crystal Growth446-453 (1978).
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Ishihara Shunichi
Nakagawa Katsumi
Nishida Shoji
Sato Hiroshi
Takai Yasuyoshi
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Hiteshew Felisa
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