Liquid-phase growth apparatus and method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Reexamination Certificate

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Details

C117S082000, C117S083000

Reexamination Certificate

active

07407547

ABSTRACT:
A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.

REFERENCES:
patent: 3752118 (1973-08-01), Solomon et al.
patent: 4354453 (1982-10-01), Koike et al.
patent: 6231667 (2001-05-01), Iwane et al.
patent: 6391108 (2002-05-01), Nishida et al.
patent: 6551908 (2003-04-01), Ukiyo et al.
patent: 2002/0112660 (2002-08-01), Nishida et al.

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