Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2006-03-21
2006-03-21
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S206000, C117S054000, C117S057000, C117S061000, C118S400000, C118S402000, C118S407000, C118S428000
Reexamination Certificate
active
07014711
ABSTRACT:
A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.
REFERENCES:
patent: 3752118 (1973-08-01), Solomon et al.
patent: 4354453 (1982-10-01), Koike et al.
patent: 6231667 (2001-05-01), Iwane et al.
patent: 6391108 (2002-05-01), Nishida et al.
patent: 2002/0112660 (2002-08-01), Nishida et al.
Mizutani Masaki
Nakagawa Katsumi
Nishida Shoji
Yoshino Takehito
Kunemund Robert
Song Matthew J.
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