Liquid phase epitaxy method of growing a junction between two se

Details Liquid phase epitaxy method of growing a junction between two se Liquid phase epitaxy method of growing a junction between two se

1976-09-01

1978-02-21

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 148 15, 148172, 148175, 357 16, 357 30, H01L 21368, H01L 2176

Patent

active

040750434

ABSTRACT:
A method of making a junction in semiconductive materials to improve the spectral response of the junction in photovoltaic detectors. A first layer of semiconductive material is grown, by epitaxy technique, on a substrate of semiconductive material of the same conductivity type. Growth of the first layer is discontinued and the temperature is changed. Then a second layer of opposite conductivity type is grown on the first layer.

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Ladd et al., "Autodoping Effects-GaAr-Ge" Metallurgical Trans., vol. 1, Mar. 1970, pp. 609-616.
Hiscocks et al., "Crystal Pulling-PbSnTe" J. Materials Science, vol. 3, 1968, pp. 76-79.
Rolls et al., "Prep. and Prop. of Lead-Tin-Telluride Photodiodes" Solid-State Electronics, vol. 13, pp. 75-81.

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