Liquid phase epitaxy method of forming a filimentary laser devic

Details Liquid phase epitaxy method of forming a filimentary laser devic Liquid phase epitaxy method of forming a filimentary laser devic

1978-04-11

1980-07-22

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29569L, 29580, 148172, 148175, 156648, 156649, 156652, 156655, 156662, 331 945C, 331 945H, 357 16, 357 18, 357 55, 357 56, H01L 21208, H01L 21302

Patent

active

042138051

ABSTRACT:
A semiconductor device of a filamentary laser is fabricated by a method including the steps of forming a first GaAlAs layer on a GaAs body, forming a laser active layer of GaAs on the first GaAlAs layer, etching the first GaAlAs layer and the laser active layer so as to have a mesa shaped structure and to expose the GaAs body, and forming a second GaAlAs layer on said exposed GaAs body and on the surface of said mesa shaped structure so that the mesa etched first GaAlAs layer and the mesa etched active layer are surrounded by the second GaAlAs layer.

REFERENCES:
patent: 3579055 (1971-05-01), Ross
patent: 3780358 (1973-12-01), Thompson
patent: 3824493 (1974-07-01), Hakki
patent: 3833435 (1974-09-01), Logan et al.
patent: 3849790 (1974-11-01), Gottsmann et al.
patent: 3883219 (1975-05-01), Logan et al.
patent: 3883821 (1975-05-01), Miller
patent: 3893044 (1975-07-01), Dumke et al.
patent: 3920491 (1975-11-01), Yonezu
patent: 3958263 (1976-05-01), Panish et al.
patent: 3983510 (1976-09-01), Hayashi et al.
Hayashi et al., "GaAs-AlGaAs . . . Lasers", J. Applied Physics, vol. 42, No. 5, Apr. 1971, pp. 1929-1941.
Tsukada et al., "Very-Low-Current . . . MESA . . . Lasers" , Applied Physics Letters, vol. 20, No. 9, May 1, 1972, pp. 344-345.
Tracy et al., "Three-Dimensional Light Guides . . . AlGaAs."
Ibid., vol. 22, No. 10, May 15, 1973, 511-512.
Nakamura et al, "Optically Pumped GaAs . . . Corrugation . . . ".
Ibid., vol. 22, No. 10, May 15, 1973, pp. 515-516.
Burnham et al., "AlGaAsP,-GaAsP Heterostructure Laser . . . ", Applied Physics Letters, vol. 17, No. 10, Nov. 15, 1970, pp. 455-457.

Affiliated with

Also associated with

Rating

Liquid phase epitaxy method of forming a filimentary laser devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Liquid phase epitaxy method of forming a filimentary laser devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Liquid phase epitaxy method of forming a filimentary laser devic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2177263