Liquid phase epitaxy (LPE) of silicon carbide

Details Liquid phase epitaxy (LPE) of silicon carbide Liquid phase epitaxy (LPE) of silicon carbide

1985-06-06

1986-09-30

Childs, Sadie L.

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

427 85, 427 93, 427240, 427255, 427344, 427346, 4274301, C23C 1632

Patent

active

046146725

ABSTRACT:
A method for making cubic SiC devices comprising the steps of preparing a preform consisting of high purity Si on which a layer of cubic SiC has been deposited by CVD; transferring the preform to a furnace containing a molten bath of Si saturated with SiC at a temperature of between 1600.degree.-1800.degree. C., the saturation being insured by the use of a high purity graphite crucible for the Si; dipping the Si-SiC preform into the molten bath and allowing deposition of more cubic SiC on the SiC layer by reducing the temperature of the already formed cubic SiC layer from the preparing step in relation to the rest of the molten bath.

REFERENCES:
patent: 4161743 (1979-07-01), Yonezawa et al.
patent: 4207482 (1980-06-01), Neumeyer et al.
"Production of Large-Area Single-Crystal Wafers of Cubic SiC for Semicondor Devices", Nishino et al.
"Buffer-Layer" Technique for the Growth of Single Crystal SiC on Si, Addamiano et al.
"Epitaxial Growth of SiC Layers", R. W. Brander.

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