Liquid phase epitaxy

Details Liquid phase epitaxy Liquid phase epitaxy

2005-06-07

2005-06-07

Norton, Nadine G. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Liquid phase epitaxial growth

C117S056000, C117S057000, C117S060000

Reexamination Certificate

active

06902619

ABSTRACT:
The invention provides a method of growing semiconductor epitaxial layers on a substrate comprising the steps ofproviding a substrate,providing at least a first growth solution and optionally one or more further growth solutions, and(i) exposing the substrate to the first growth solution, the growth solution being under a supersaturated condition such that a first layer grows on the surface of the substrate; and,(ii) optionally exposing the substrate to one or more further growth solutions, the further growth solutions being under a supersaturated condition such that one or more further layers grow on the surface of the first layer; and(iii) varying the pressure of the system to change the degree of supersaturation of the first growth solution or one or more further growth solutions to affect the growth of the first layer or one or more further layers.

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